AlGaInN-based lasers produced using etched facet technology
US8130806B2 · kind B2 · utility
6Cited by
4References
17Claims
0Family size
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Key dates
| Filing date | Jun 20, 2006 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Jan 1, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34333
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.