Process for producing silicon carbide single crystal
US8133321B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2006 |
| Grant date | Mar 13, 2012 |
| Priority date | — |
| Expiry date | Jul 6, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/18
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for producing a silicon carbide single crystal in which a silicon carbide single crystal layer is homo-epitaxially or hetero-epitaxially grown on a surface of a single crystal substrate, wherein a plurality of substantially parallel undulation ridges that extend in a first direction on the single crystal substrate surface is formed on said single crystal substrate surface; each of the undulation ridges on said single crystal substrate surface has a height that undulates as each of the undulation ridges extends in the first direction; and the undulation ridges are disposed so that planar defects composed of anti-phase boundaries and/or twin bands that propagate together with the epitaxial growth of the silicon carbide single crystal merge with each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.