Information recording medium, its manufacturing method, and sputtering target
US8133566B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2007 |
| Grant date | Mar 13, 2012 |
| Priority date | — |
| Expiry date | Apr 28, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/21
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An information recording medium is provided that has high recording sensitivity and high erasability, even when a recording layer thereof is as thin as about 3 nm. An information recording medium 15 on which information can be recorded by applying light or electrical energy has at least a recording layer 104 that undergoes phase change, while the recording layer 104 contains at least one element selected from among Zn, Si and C, and Sb in total proportion of 85 atomic % or more and has a composition preferably represented by the formula Sb100-a1M1a1 (atomic %) (wherein M1 represents at least one element selected from among Zn, Si and C, and a1 is a proportion in terms of atomic % that satisfies a relationship of 0<a1≦50).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.