Silicon-nitrogen compound film, and gas-barrier film and thin-film device using the silicon-nitrogen compound film
US8133577B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2008 |
| Grant date | Mar 13, 2012 |
| Priority date | — |
| Expiry date | May 1, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/26
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon-nitrogen compound film according to the first aspect of the present invention is made of a material expressed by a compositional formula Si3NxOyHz, where 10≦(3x+2y)≦12, 3.4≦x≦4.0, 0≦y, 0≦z<2.0, the peak-area ratio of a first area of a first peak appearing near a wave number of 2150 cm−1 in a Fourier-transform infrared absorption spectrum of the material and corresponding to a Si—H stretching vibration to a second area of a second peak appearing near a wave number of 810 cm−1 in the Fourier-transform infrared absorption spectrum and corresponding to a Si—N stretching vibration is smaller than 0.2, and the silicon-nitrogen compound film has a thickness t (in nanometers) and a density d (g/cm3) which satisfy the inequalities,1.9≦d≦2.5, and−700d+1930≦6t≦−700d+2530.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.