Method for forming extended gate field effect transistor (EGFET) based sensor and the sensor therefrom
US8133750B2 · kind B2 · utility
1Cited by
1References
33Claims
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Key dates
| Filing date | Dec 23, 2008 |
| Grant date | Mar 13, 2012 |
| Priority date | — |
| Expiry date | Aug 9, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/414
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The invention provides a method for forming an extended gate field effect transistor (EGFET) based sensor, including: (a) providing a substrate; (b) forming a sensing film including titanium dioxide, ruthenium doped titanium dioxide or ruthenium oxide on the substrate; and (c) forming a conductive wire extended from the sensing film for external contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.