Chemical-mechanical polishing method for polishing phase-change material and method of fabricating phase-change memory device using the same
US8133756B2 · kind B2 · utility
5Cited by
2References
18Claims
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Key dates
| Filing date | Nov 4, 2009 |
| Grant date | Mar 13, 2012 |
| Priority date | — |
| Expiry date | Jun 4, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A chemical-mechanical polishing (CMP) method of polishing a phase-change material and a method of fabricating a phase-change memory, the CMP method including forming the phase-change material on an activation surface of a semiconductor wafer, and performing a CMP process on the phase-change material using a polishing pad, wherein the performing the CMP process includes reducing a change in the composition of the phase-change material by adjusting, within a predetermined range, a temperature of a region where the semiconductor wafer and the polishing pad contact each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.