Semiconductor device and method of manufacturing the same
US8133785B2 · kind B2 · utility
3Cited by
3References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 19, 2009 |
| Grant date | Mar 13, 2012 |
| Priority date | — |
| Expiry date | Mar 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of manufacturing a semiconductor device, that buried gate electrodes are formed in a pair of trenches in a substrate, so as to be recessed from the level of the top end of the trenches, a base region is formed between a predetermined region located between the pair of trenches, and a source region is formed over the base region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.