Free-standing thickness of single crystal material and method having carrier lifetimes
US8133800B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2009 |
| Grant date | Mar 13, 2012 |
| Priority date | — |
| Expiry date | Jan 21, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a thickness of silicon material includes providing a silicon ingot material having a surface region and introducing a plurality of particles having an energy of about 1-5 MeV through the surface region to a depth to define a cleave region and a thickness of detachable material between the cleave region and the surface region. Additionally, the method includes processing the silicon ingot material to free the thickness of detachable material at a vicinity of the cleave region and causing formation of a free-standing thickness of material characterized by a carrier lifetime about 10 microseconds and a thickness ranging from about 20 microns to about 150 microns with a thickness variation of less than about five percent. Furthermore, the method includes treating the free-standing thickness of material using a thermal treatment process to recover the carrier lifetime to about 200 microseconds and greater.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.