Methods for forming dense dielectric layer over porous dielectrics
US8133805B2 · kind B2 · utility
4Cited by
8References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2009 |
| Grant date | Mar 13, 2012 |
| Priority date | — |
| Expiry date | Apr 29, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76835
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming a dense dielectric layer over the surface of an opening in a porous inter-layer dielectric having an ultra-low dielectric constant are disclosed. The disclosure provides methods for exposing the sidewall surface and the bottom surface of the opening to a plurality of substantially parallel ultra-violet (UV) radiation rays to form a dense dielectric layer having a substantially uniform thickness over both the sidewall surface and the bottom surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.