High silicon content siloxane polymers for integrated circuits
US8133965B2 · kind B2 · utility
0Cited by
0References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2008 |
| Grant date | Mar 13, 2012 |
| Priority date | — |
| Expiry date | Mar 28, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
Thin films are disclosed that are suitable as thin films in IC's and for other similar applications. In particular, the invention concerns thin films comprising compositions obtainable by hydrolysis of two or more silicon compounds, which yield an at least partially cross-linked siloxane structure. The invention also concerns a method for producing such films by preparing siloxane compositions by hydrolysis of suitable reactants, by applying the hydrolyzed compositions on a substrate in the form of a thin layer and by curing the layer to form a high silicon content film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.