Light-emitting diode

US8134174B2 · kind B2 · utility

Assignee

• Chi Mei Lighting Technology Corp. · TW

Inventors

• Kuohui Yu · Tainan, TW
• Chienchun Wang · Danei, TW
• Changhsin Chu · Danei, TW
• Menghsin Li · Danei, TW

Key dates

• Filing date: Mar 11, 2010
• Grant date: Mar 13, 2012
• Expiry date: Sep 28, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/853

Abstract

A light-emitting diode and a method for manufacturing the same are described. The light-emitting diode includes a bonding substrate, a first conductivity type electrode, a bonding layer, an epitaxial structure, a second conductivity type electrode, a growth substrate and an encapsulant layer. The first conductivity type electrode and the bonding layer are respectively disposed on two surfaces of the bonding substrate. The epitaxial structure includes a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. A trench is set around the epitaxial structure and extends from the second conductivity type semiconductor layer to the first conductivity type semiconductor layer. The second conductivity type electrode is electrically connected to the second conductivity type semiconductor layer. The growth substrate is disposed on the epitaxial structure and includes a cavity exposing the epitaxial structure and the trench. The encapsulant layer is filled in the cavity.