Radio frequency semiconductor device
US8134224B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2008 |
| Grant date | Mar 13, 2012 |
| Priority date | — |
| Expiry date | Jan 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device receiving as input a radio frequency signal having a frequency of 500 MHz or more and a power of 20 dBm or more is provided. The semiconductor device includes: a silicon substrate; a silicon oxide film formed on the silicon substrate; a radio frequency interconnect provided on the silicon oxide film and passing the radio frequency signal; a fixed potential interconnect provided on the silicon oxide film and placed at a fixed potential; and an acceptor-doped layer. The acceptor-doped layer is formed in a region of the silicon substrate. The region is in contact with the silicon oxide film. The acceptor-doped layer is doped with acceptors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.