Semiconductor device that degrades leak current of a transistor
US8134404B2 · kind B2 · utility
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2References
5Claims
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Assignee
Inventors
Key dates
| Filing date | Jan 22, 2010 |
| Grant date | Mar 13, 2012 |
| Priority date | — |
| Expiry date | Jul 2, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/0013
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device, has a main transistor that is a first-conductivity-type MOS transistor and has the drain connected to a first potential; a first switch circuit that is connected between the source of said main transistor and a second potential; a dummy transistor that is a first-conductivity-type MOS transistor whose source serves also as the source of said main transistor; and a second switch circuit that is connected between the drain of said dummy transistor and said first potential or said second potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.