Exchange-assisted spin transfer torque switching
US8134864B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2009 |
| Grant date | Mar 13, 2012 |
| Priority date | — |
| Expiry date | Oct 13, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In general, the invention is directed to techniques for reducing the amount of switching current that is utilized within a magnetic storage (e.g., MRAM) device. An example apparatus includes a fixed magnetic layer that provides a fixed direction of magnetization, an exchange-coupled magnetic multi-layer structure, and a non-magnetic layer placed between the fixed magnetic layer and the exchange-coupled magnetic multi-layer structure. The exchange-coupled magnetic multi-layer structure includes a recording layer configured to record information and an assisting layer having a lower anisotropy than the recording layer. The exchange coupling between the recording and assisting layers is operable to switch a magnetization direction of the recording layer. In some cases, the exchange-coupled magnetic multi-layer structure may further include a spacer separating the recording and assisting layers and configured to weaken an exchange coupling between the recording and assisting layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.