Method of manufacturing monolithic parallel interconnect structure

US8137148B2 · kind B2 · utility

Assignee

• General Electric Company · US

Inventors

• Donald S. Farquhar · Niskayuna, US
• Anil Raj Duggal · Niskayuna, US
• Michael Scott Herzog · Voorheesville, US
• Jeffrey Michael Youmans · Niskayuna, US
• Stefan Rakuff · Clifton Park, US
• Linda Ann Boyd · Malta, US

Key dates

• Filing date: Sep 30, 2009
• Grant date: Mar 20, 2012
• Expiry date: Jan 13, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K59/82

Abstract

An optoelectronic device having a monolithic interconnect structure includes a continuous anode layer, a discontinuous cathode layer, and an electroactive layer sandwiched between the continuous anode layer and the discontinuous cathode layer.