Heat stabilized sub-stoichiometric dielectrics
US8137742B2 · kind B2 · utility
1Cited by
11References
28Claims
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Key dates
| Filing date | Jul 20, 2007 |
| Grant date | Mar 20, 2012 |
| Priority date | — |
| Expiry date | May 25, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A sub-stoichiometric oxide, nitride or oxynitride layer in an optical stack, alone or in direct contact with one or two stabilizing layers, stabilizes the optical properties of the stack. The stabilizing layer(s) can stabilize the chemistry and optical properties of the sub-stoichiometric layer during heating. The change in optical characteristics of the sub-stoichiometric layer upon heating can counter the change in optical characteristics of the rest of the optical stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.