Aluminum nitride single crystal film, aluminum nitride single crystal multi-layer substrate and manufacturing processes thereof
US8137825B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 1, 2006 |
| Grant date | Mar 20, 2012 |
| Priority date | — |
| Expiry date | Jul 20, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a method of manufacturing an aluminum nitride single crystal film on a substrate by heating a sapphire substrate in the presence of carbon, nitrogen and carbon monoxide, an aluminum compound which differs from the raw material sapphire substrate and the formed aluminum nitride single crystal and can control the concentration of aluminum in the heating atmosphere, such as aluminum nitride or alumina, is made existent in a reaction system to promote a reduction nitriding reaction.An aluminum nitride single crystal multi-layer substrate having an aluminum nitride single crystal film on the surface of a sapphire substrate, wherein the aluminum nitride single crystal has improved crystallinity and a low density of defects, is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.