Method for manufacturing thin film transistor having microcrystalline semiconductor film
US8138032B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2009 |
| Grant date | Mar 20, 2012 |
| Priority date | — |
| Expiry date | Oct 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A thin film transistor includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode; a semiconductor layer which includes a plurality of crystalline regions in an amorphous structure and which forms a channel formation region, in contact with the gate insulating layer; a semiconductor layer including an impurity element imparting one conductivity type, which forms source and drain regions; and a buffer layer including an amorphous semiconductor between the semiconductor layer and the semiconductor layer including an impurity element imparting one conductivity type. The crystalline regions have an inverted conical or inverted pyramidal crystal particle which grows approximately radially in a direction in which the semiconductor layer is deposited, from a position away from an interface between the gate insulating layer and the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.