Methods of using a set of silicon nanoparticle fluids to control in situ a set of dopant diffusion profiles
US8138070B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2009 |
| Grant date | Mar 20, 2012 |
| Priority date | — |
| Expiry date | Nov 25, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a multi-doped junction is disclosed. The method includes providing a first substrate and a second substrate. The method also includes depositing a first ink on a first surface of each of the first substrate and the second substrate, the first ink containing a first set of nanoparticles and a first set of solvents, the first set of nanoparticles containing a first concentration of a first dopant. The method further includes depositing a second ink on a second surface of each of the first substrate and the second substrate, the second ink containing a second set of nanoparticles and a second set of solvents, the second set of nanoparticles containing a second concentration of a second dopant. The method also includes placing the first substrate and the second substrate in a back to back configuration; and heating the first substrate and the second substrate in a first drive-in ambient to a first temperature and for a first time period. The method further includes exposing the first substrate and the second substrate in the back to back configuration to a deposition ambient, the deposition ambient containing POCl3, a carrier N2 gas, a main N2 gas, and a reactive O2…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.