Plasma processing apparatus
US8138444B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 20, 2008 |
| Grant date | Mar 20, 2012 |
| Priority date | — |
| Expiry date | Jan 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a plasma processing apparatus including a chamber, a lower electrode, an upper electrode, and a substrate sensor. The chamber is configured to provide a reaction space. The lower electrode is disposed at a lower region in the chamber to mount a substrate thereon. The upper electrode is disposed at an upper region in the chamber to be opposite to the lower electrode. The substrate sensor is provided on the chamber to sense the substrate. Herein, the upper electrode includes an electrode plate and an insulating plate attached on the bottom of the electrode plate, and at least one guide hole is formed in the upper electrode to guide light output from the substrate sensor toward the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.