GaN series light-emitting diode structure
US8138494B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2010 |
| Grant date | Mar 20, 2012 |
| Priority date | — |
| Expiry date | Oct 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
The present invention relates to a GaN series light-emitting diode structure, which includes a substrate; at least one GaN series layer formed over the substrate; subsequently an interface blocking structure composed of an n-type GaN series superlattice structure and a GaN series light-emitting layer, and a GaN series light-emitting layer are formed over the GaN series layer; and a p-type GaN series layer formed over the GaN series light-emitting layer. In the present invention, the radiative recombination efficiency is improved by introducing an interface blocking structure before the light-emitting layer under the epitaxial conditions of low temperature and pure nitrogen atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.