Radiation-emitting semiconductor component and method for producing the semiconductor component

US8138511B2 · kind B2 · utility

Assignee

• OSRAM GmbH · DE

Inventors

• Johannes Baur · Regensburg, DE
• Dominik Eisert · Regensberg, DE
• Michael Fehrer · Bad Abbach, DE
• Berthold Hahn · Hemau, DE
• Volker Harle · Hemau, DE
• Marianne Ortmann · Bernhardswald, DE
• Uwe Strauss · Bad Abbach, DE
• Johannes Volkl · Erlangen, DE
• Ulrich Zehnder · Regensburg, DE

Key dates

• Filing date: Dec 7, 2006
• Grant date: Mar 20, 2012
• Expiry date: Jun 23, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/81

Abstract

A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.