Nonvolatile semiconductor storage device
US8139388B2 · kind B2 · utility
4Cited by
0References
5Claims
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Assignee
Inventors
Key dates
| Filing date | Sep 23, 2009 |
| Grant date | Mar 20, 2012 |
| Priority date | — |
| Expiry date | Jun 23, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/223
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
This invention has the purpose of providing a nonvolatile semiconductor storage device which is capable of entering multivalued storage in a FeFET unit without requiring preparation of a plurality of voltage sources.The nonvolatile semiconductor storage device is provided with multivalued ferroelectric memory cells which impart varied quantities of polarization to a ferroelectric material by applying pulse voltages having one and the same height and varied widths and consequently produce varied states of storage in conformity with the varied quantities of polarization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.