Magnetoresistive element and magnetoresistive random access memory including the same
US8139405B2 · kind B2 · utility
11Cited by
7References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 5, 2011 |
| Grant date | Mar 20, 2012 |
| Priority date | — |
| Expiry date | May 5, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.