Methods and systems for determining a defect criticality index for defects on wafers
US8139844B2 · kind B2 · utility
7Cited by
242References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2008 |
| Grant date | Mar 20, 2012 |
| Priority date | — |
| Expiry date | Jan 19, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Various methods and systems for determining a defect criticality index (DCI) for defects on wafers are provided. One computer-implemented method includes determining critical area information for a portion of a design for a wafer surrounding a defect detected on the wafer by an inspection system based on a location of the defect reported by the inspection system and a size of the defect reported by the inspection system. The method also includes determining a DCI for the defect based on the critical area information, a location of the defect with respect to the critical area information, and the reported size of the defect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.