Flash memory based storage devices utilizing magnetoresistive random access memory (MRAM) to store files having logical block addresses stored in a write frequency file buffer table
US8140739B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2008 |
| Grant date | Mar 20, 2012 |
| Priority date | — |
| Expiry date | Oct 27, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02D10/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A flash memory based storage device may utilize magnetoresistive random access memory (MRAM) as at least one of a device memory, a buffer, or high write volume storage. In some embodiments, a processor of the storage device may compare a logical block address of a data file to a plurality of logical block addresses stored in a write frequency file buffer table and causes the data file to be written to the high write volume MRAM when the logical block address of the data file matches at least one of the plurality of logical block addresses stored in the write frequency file buffer table. In other embodiments, upon cessation of power to the storage device, the MRAM buffer stores the data until power is restored, after which the processor causes the buffered data to be written to the flash memory under control of the flash memory controller.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.