Silicon monoxide vapor deposition material and process for producing the same
US8142751B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 5, 2006 |
| Grant date | Mar 27, 2012 |
| Priority date | — |
| Expiry date | Aug 5, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/96
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
In a powder-sintered type silicon monoxide based evaporating material which is used to form an evaporated film of silicon monoxide, the generation of splash is restrained. Material strength that can resist against the use of the material is ensured. In order to realize these, a starting powder made of precipitating SiO is sintered at 700 to 1000° C. to form an evaporating material. The precipitation of Si is restrained in the step of the sintering. In the measurement thereof by XRD, the peak strength P1 at a Si peak point generated near 2θ=28° and the base strength P2 at the peak point expected from the average strength gradient before and after the peak point satisfies the following: P1/P2≦3. The compression fracture strength of the evaporating material after the material is sintered is raised to 5 MPa or more by selective use of precipitating SiO produced by a vacuum condensing machine.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.