Patent · US Active

Method for synthesis of high quality graphene

US8142754B2 · kind B2 · utility

7Cited by

0References

9Claims

0Family size

Assignee

The Regents of the University of California · US

Inventors

Alessandra Lanzara · Piedmont, US
Andreas Schmid · Berkeley, US
Xiaozhu Yu · Berkeley, US
Choonkyu Hwang · Albany, US
Annemarie Kohl · Penzberg, DE
Chris Jozwiak · Oakland, US

Key dates

Filing date	Mar 8, 2011
Grant date	Mar 27, 2012
Priority date	—
Expiry date	Mar 8, 2031

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/744
WIPO fieldMaterials, metallurgy
WIPO sectorChemistry

Abstract

A method is described herein for the providing of high quality graphene layers on silicon carbide wafers in a thermal process. With two wafers facing each other in close proximity, in a first vacuum heating stage, while maintained at a vacuum of around 10−6 Torr, the wafer temperature is raised to about 1500° C., whereby silicon evaporates from the wafer leaving a carbon rich surface, the evaporated silicon trapped in the gap between the wafers, such that the higher vapor pressure of silicon above each of the wafers suppresses further silicon evaporation. As the temperature of the wafers is raised to about 1530° C. or more, the carbon atoms self assemble themselves into graphene.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.