Method for dicing a diced optoelectronic semiconductor wafer
US8143081B2 · kind B2 · utility
1Cited by
7References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2007 |
| Grant date | Mar 27, 2012 |
| Priority date | — |
| Expiry date | Oct 8, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T83/0304
Abstract
A method for dicing an optoelectronic semiconductor wafer has steps of preparing an optoelectronic semiconductor wafer, laser scribing, diamond saw dicing and forming optoelectronic semiconductor dies. A product for dicing an optoelectronic semiconductor wafer has a substrate and an epitaxial layer. The substrate has a first surface, a second surface and two rough surfaces. The rough surfaces are formed by laser scribing the wafer to define multiple guide grooves on the wafer and diamond saw grooving the wafer along the guide grooves. The epitaxial layer is formed epitaxially on the first surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.