Solar cell with superlattice structure and fabricating method thereof
US8143513B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 28, 2006 |
| Grant date | Mar 27, 2012 |
| Priority date | — |
| Expiry date | Sep 18, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A solar cell with a superlattice structure and a fabricating method thereof are provided, which includes fabricating a superlattice structure of GaAsN/GaInAs, GaAsN/GaSbAs, or GaAsN/GaInSbAs between a base and an emitter of a middle cell of a triple junction solar cell by a strain-compensation technology. The provided solar cell not only decreases crystalline defects and increases the critical thickness of the crystal, but also makes the energy bandgap of GaAsN and GaInAs reach around the energy of 1.0 eV (electron volt). Hence, the absorption region can be raised to around the energy of 1.0 eV to enhance the efficiency of the solar cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.