Cadmium telluride thin film photovoltaic devices and methods of manufacturing the same
US8143515B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2009 |
| Grant date | Mar 27, 2012 |
| Priority date | — |
| Expiry date | Aug 4, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
Methods for manufacturing a cadmium telluride based thin film photovoltaic device are generally disclosed. The method can include sputtering a resistive transparent layer on a transparent conductive oxide layer from an alloy target including zinc from about 5% by weight and about 33% by weight and tin. The method can also include forming a cadmium sulfide layer on the resistive transparent layer, forming a cadmium telluride layer on the cadmium sulfide layer, and forming a back contact layer on the cadmium telluride layer. Cadmium telluride thin film photovoltaic devices are also generally disclosed including a resistive transparent layer having a mixture of zinc oxide and tin oxide having a zinc oxide concentration between about 5% and about 33% by mole fraction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.