Resistive material for bolometer, bolometer for infrared detector using the material, and method of manufacturing the bolometer
US8143579B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2010 |
| Grant date | Mar 27, 2012 |
| Priority date | — |
| Expiry date | Aug 19, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J5/046
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A resistive material for a bolometer, a bolometer for an infrared detector using the material, and a method of manufacturing the bolometer are provided. In the resistive material, at least one element selected from the group consisting of nitrogen (N), oxygen (O) and germanium (Ge) is included in antimony (Sb). The resistive material has superior properties such as high temperature coefficient of resistance (TCR), low resistivity, a low noise constant, and is easily formed in a thin film structure by sputtering typically used in a complementary metal-oxide semiconductor (CMOS) process, so that it can be used as a resistor for the bolometer for an uncooled infrared detector, and thus provide the infrared detector with superior temperature precision.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.