Self aligned field effect transistor structure

US8143670B2 · kind B2 · utility

Assignee

• KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY · KR

Inventors

• Lee-Mi Do · Daejeon, KR
• Kyu Ha Baek · Daejeon, KR

Key dates

• Filing date: Nov 16, 2009
• Grant date: Mar 27, 2012
• Expiry date: Dec 15, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017

Abstract

Provided is a self aligned filed effect transistor structure. The self aligned field effect transistor structure includes: an active region on a substrate; a U-shaped gate insulation pattern on the active region; and a gate electrode self-aligned by the gate insulation pattern and disposed in an inner space of the gate insulation pattern.