Thin film transistor for driving gate line and liquid crystal display having the same
US8144299B2 · kind B2 · utility
1Cited by
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20Claims
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Key dates
| Filing date | Jul 14, 2008 |
| Grant date | Mar 27, 2012 |
| Priority date | — |
| Expiry date | Dec 6, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2310/0286
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor for driving a gate line and a liquid crystal display having the same are provided. The thin film transistor for driving a gate line includes a gate electrode, a semiconductor layer formed on the gate electrode, a drain electrode formed on the semiconductor layer, a source electrode formed on the semiconductor layer and separated from the drain electrode and being coupled to the gate line, and a ripple-prevention electrode formed on the drain electrode which overlaps at least a part of the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.