Method of making damascene diodes using selective etching methods
US8148230B2 · kind B2 · utility
2Cited by
2References
4Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 25, 2010 |
| Grant date | Apr 3, 2012 |
| Priority date | — |
| Expiry date | Dec 2, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8845
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first conductivity type semiconductor layer in the plurality of openings, forming a second conductivity type semiconductor layer over the first conductivity type semiconductor layer in the plurality of openings, and selectively etching the second conductivity type semiconductor layer using an upper surface of the first conductivity type semiconductor layer as a stop to form a recess in the plurality of openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.