Magnetic device with integrated magneto-resistive stack
US8148709B2 · kind B2 · utility
1Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2009 |
| Grant date | Apr 3, 2012 |
| Priority date | — |
| Expiry date | Jan 5, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
This magnetic device integrates a magneto-resistive stack, the stack comprising at least two layers made out of a ferromagnetic material, separated from each other by a layer of non-magnetic material; and means for causing an electron current to flow perpendicular to the plane of the layers, with at least one integrated nano-contact intended to inject the current into the magneto-resistive stack. The nano-contact is made in a bilayer composed of a solid electrolyte on which has been deposited a soluble electrode composed of a metal that has been at least partially dissolved in the electrolyte.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.