Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using nonvolatile memory element
US8148711B2 · kind B2 · utility
12Cited by
1References
15Claims
0Family size
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Key dates
| Filing date | May 16, 2008 |
| Grant date | Apr 3, 2012 |
| Priority date | — |
| Expiry date | Jul 18, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/883
Abstract
A nonvolatile semiconductor apparatus of the present invention comprises (103), a second electrode (105), and a resistance variable layer (104) disposed between the first electrode (103) and the second electrode (105), a resistance value of the resistance variable layer being switchable reversibly in response to an electric signal applied between the electrodes (103), (105), wherein the resistance variable layer (104) comprises an oxide containing tantalum and nitrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.