Light-emitting device and manufacturing method thereof
US8148723B2 · kind B2 · utility
4Cited by
7References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2011 |
| Grant date | Apr 3, 2012 |
| Priority date | — |
| Expiry date | Jul 8, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
Abstract
A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked in this order (a thin-film stacked body); first etching is performed to expose the first conductive film and form at least a pattern of the thin-film stacked body; second etching is performed to form a pattern of the first conductive film. The second etching is performed under a condition in which the first conductive film is side-etched. Further, after forming the patterns, an EL layer can be formed selectively by utilizing a depression and a projection due to the patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.