Photodiodes, image sensing devices and image sensors
US8148762B2 · kind B2 · utility
11Cited by
1References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2008 |
| Grant date | Apr 3, 2012 |
| Priority date | — |
| Expiry date | Sep 3, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
Provided are photodiodes, image sensing devices and image sensors. An image sensing device includes a p-n junction photodiode having a metal pattern layer on an upper surface thereof. An image sensor includes the image sensing device and a micro-lens formed above the metal pattern layer. The metal pattern layer filters light having a first wavelength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.