Semiconductor device having first and second device isolation layers formed of different insulation materials
US8148784B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 20, 2009 |
| Grant date | Apr 3, 2012 |
| Priority date | — |
| Expiry date | Jun 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/49
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprising a trench device isolation layer and a method for fabricating the semiconductor device are disclosed. The method comprises forming a plurality of first trenches on a first region of a semiconductor substrate, filling the first trenches with a first insulation material to form first device isolation layers, forming a plurality of second trenches on a second region of the semiconductor substrate, and filling the second trenches with a second insulation material different from the first insulation material to form second device isolation layers, wherein the first trenches and the second trenches are formed using different respective processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.