CMOS image sensor with shared sensing node
US8149312B2 · kind B2 · utility
3Cited by
2References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 31, 2006 |
| Grant date | Apr 3, 2012 |
| Priority date | — |
| Expiry date | Apr 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A CMOS image sensor has a pixel array provided with a plurality of unit pixels arranged in a matrix shape of rows and columns. Each of the unit pixel includes a photocharge generation means for generating photocharges by absorbing an external light; and a sensing node for receiving the photocharges transferred from the photocharge generation means, wherein the sensing node of the unit pixel in a previous scan line is shared with a sensing node of a unit pixel in a current scan line in response to a line select signal of the current line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.