Semiconductor laser device
US8149889B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 7, 2010 |
| Grant date | Apr 3, 2012 |
| Priority date | — |
| Expiry date | Jun 7, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34306
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device includes a laser diode provided on a semiconductor substrate, the laser diode including a first optical waveguide having a gain waveguide, a plurality of photodiodes, a first wavelength-selective filter having periodic transmission peaks, and a second wavelength-selective filter having periodic transmission peaks, the period of the transmission peaks of the second wavelength-selective filter being different from the period of the transmission peaks of the first wavelength-selective filter. Furthermore, two photodiodes among the plurality of photodiodes are optically coupled to the first optical waveguide through the first and second wavelength-selective filters, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.