In-Ga-Zn-Sn type oxide sinter and target for physical film deposition
US8153031B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Nov 30, 2007 |
| Grant date | Apr 10, 2012 |
| Priority date | — |
| Expiry date | Oct 24, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02631
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An oxide sintered body including an indium element (In), a gallium element (Ga), a zinc element (Zn) and a tin element (Sn), and including a compound shown by Ga2In6Sn2O16 or (Ga,In)2O3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.