Fabrication apparatus and fabrication method of semiconductor device produced by heating substrate
US8153454B2 · kind B2 · utility
1Cited by
1References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2008 |
| Grant date | Apr 10, 2012 |
| Priority date | — |
| Expiry date | Aug 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68764
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fabrication apparatus and fabrication method of a semiconductor device are provided, allowing the temperature distribution of a substrate to be rendered uniform. The fabrication apparatus for a semiconductor device includes a susceptor holding the substrate, a heater arranged at a back side of the susceptor, a support member located between the substrate and susceptor, including a support portion, and a spacer located between the susceptor and support member. The spacer has an opening formed corresponding to the site where said support portion is located, at an opposite face side of the support member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.