Method of manufacturing thin film transistor substrate
US8153463B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2010 |
| Grant date | Apr 10, 2012 |
| Priority date | — |
| Expiry date | Jul 24, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A method of manufacturing a thin film transistor substrate includes a first process in which a gate line pattern including a gate line and a gate electrode is formed with a first conductive material on a substrate using a first mask, a second process in which a first insulating layer is formed on the substrate and a data line pattern including a data line, a source electrode, and a drain electrode is formed with a second conductive material using a second mask, and a third process in which a second insulating layer is formed on the substrate and a pixel electrode connected to the drain electrode is formed on the second insulating layer with a third conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.