Semiconductor device and method for manufacturing the same
US8153487B2 · kind B2 · utility
0Cited by
2References
4Claims
0Family size
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Key dates
| Filing date | Mar 10, 2010 |
| Grant date | Apr 10, 2012 |
| Priority date | — |
| Expiry date | Jun 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/681
Abstract
A semiconductor device includes a semiconductor substrate, a first insulating film provided on the semiconductor substrate, a charge storage layer provided on the first insulating film, a second insulating film comprising a plurality of insulating films provided on the charge storage layer and comprising a nitride film as an uppermost layer, and a single-layer control gate electrode provided on the second insulating film and comprising metal silicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.