Method for manufacturing nonvolatile storage device
US8153488B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2010 |
| Grant date | Apr 10, 2012 |
| Priority date | — |
| Expiry date | Sep 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
Manufacturing a nonvolatile storage device including: stacking a first electrode film forming a first electrode and a first storage unit film forming a first storage unit on a substrate; processing the first electrode film and the first storage unit film into a strip shape; burying a sacrifice layer between the processed first electrode films and between the processed first storage unit films; forming a second electrode film forming a second electrode on the first storage unit film and the sacrifice layer; forming a mask layer on the second electrode film; processing the second electrode film into a strip shape using the mask layer; removing a portion of the first storage unit film exposed from the sacrifice layer using the mask layer processing the first storage unit film into a columnar shape, removing the sacrifice layer exposing the first storage unit film; and removing the exposed first storage unit film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.