Light-emitting device including thin film transistor
US8154015B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2010 |
| Grant date | Apr 10, 2012 |
| Priority date | — |
| Expiry date | Apr 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/441
Abstract
The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.