Composite semiconductor structure formed using atomic bonding and adapted to alter the rate of thermal expansion of a substrate
US8154099B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2009 |
| Grant date | Apr 10, 2012 |
| Priority date | — |
| Expiry date | Oct 12, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In certain embodiments, a method includes forming a composite semiconductor structure for altering a rate of thermal expansion of a first substrate. The composite semiconductor structure is formed by atomically bonding a first surface of a thermal matching substrate to a first surface of the first substrate, and atomically bonding a second surface of the thermal matching substrate to a first surface of a balancing substrate. The thermal matching substrate is adapted to alter the rate of thermal expansion of the first substrate and the balancing substrate is adapted to substantially prevent warping of the composite semiconductor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.