Diamondoid monolayers as electron emitters
US8154185B2 · kind B2 · utility
3Cited by
10References
30Claims
0Family size
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Key dates
| Filing date | Feb 12, 2007 |
| Grant date | Apr 10, 2012 |
| Priority date | — |
| Expiry date | Oct 8, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/30457
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.